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. 2011 Jan 11;11(1):674–695. doi: 10.3390/s110100674

Figure 3.

Figure 3.

The sensitivity of Pt–(undoped) GaN Shottky diodes for 1% H2 in N2 at room temperature as a function of the annealing temperature of the GaN surfaces. The sensitivity is defined as a shift of voltage upon exposure to 1% H2 in N2 at room temperature at a current of 0.1 nA. The inset shows the room temperature photoluminescence spectra of as-grown and 900 °C annealed GaN surfaces.