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. 2011 Jan 11;11(1):674–695. doi: 10.3390/s110100674

Figure 5.

Figure 5.

I–V characteristics of MIS Pt–GaN diodes with both 10 nm SiO2 (a) and 10 nm SixNy dielectrics (b) in N2 and response to exposure to 1% H2 in N2 at room temperature. Reproduced with permission from Reference [17]. Copyright The Japan Society of Applied Physics.