Table 2.

Sensitivities of conventional Pt–GaN Schottky and MIS Pt–GaN diodes in 1% H₂ in N₂ extracted from Figures 1 and 5. Here, the sensitivities are defined as shifts in voltage upon exposure to 1% H₂ in N₂ at a current of 0.1 μA. Reproduced with permission from Reference [17]. Copyright The Japan Society of Applied Physics.

	Sensitivity (V)
Schottky diode	0.30
MIS diode (SiO2)	0.59
MIS diode (SixNy)	0.00