Figure 5.

(a) Response of SnO₂ nanowires operated in self-heating mode and with external microheater. (b) Estimated temperature of the devices at different I_m (r_nw = 35 nm). The inset is a SEM image of a SnO₂ nanowire connected to two Pt microelectrodes fabricated with focused ion beam. The equivalent circuit of this structure corresponds to two back-to-back diodes (D_FW and D_RV) in series with the nanowire resistance (R_NW). These three components dissipate electrical power and contribute to the self-heating of the device (Reprinted from reference [29] with permission from American Institute of Physics).