. 2009 Feb 23;9(2):1141–1166. doi: 10.3390/s90201141

Table 1.

Hole effective mass in highly stressed silicon (unit: free-electron mass m₀).

m_l1	m_t1	m_d1	m_l2	m_t2	m_d2
0.870	0.170	0.293	0.135	0.369	0.264