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. 2009 Oct 21;9(10):8336–8348. doi: 10.3390/s91008336

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© 2009 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.

This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).

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Figure 5. — (a) The measured I_D-V_SB characteristics of the ISFET for various V_GB. (b) The measured efficiency (I_D/I_S) against V_GB of the ISFET when I_S is fixed at 10 μA. Operation modes are changed from MOS mode to the LBJT mode by increasing the gate voltage.