Table 1.

Etching rates of silicon at different KOH concentrations at 70 °C [17,18].

Crystallographic Orientation	30%	40%	50%
(100)	0.797	0.599	0.539
(110)	1.455	1.294	0.870
(210)	1.561	1.233	0.959
(211)	1.319	0.950	0.621
(221)	0.714	0.544	0.322
(310)	1.456	1.088	0.757
(311)	1.436	1.067	0.746
(320)	1.543	1.287	1.013
(331)	1.160	0.800	0.489
(530)	1.556	1.280	1.033
(540)	1.512	1.287	0.914
(111)	0.005	0.009	0.009
(411)	1.340	0.910	0.660