Figure 1. Electrical manipulation of the charge state of NV centres in diamond.

(a) Sketch of the experimental configuration showing the shallow-implanted NV centres in the O/H-patterned diamond surface. (b) Energy band schematic of the diamond/electrolyte interface. By applying a gate voltage between the gate electrode and H-terminated diamond, it is possible to control the Fermi energy level, moving it through the charge transition levels NV^+/0 and NV^0/−. (c) Fluorescence image of an O/H-patterned diamond with shallow-implanted NV centres under floating gate conditions. Regions 1 and 2 indicate areas with low and high dose of NVs, respectively. (d) Time trace of the fluorescence intensity upon changes between U_G=±0.5 V (650 nm longpass filter) recorded on region (2).