Skip to main content
. 2012 Mar 6;3:729. doi: 10.1038/ncomms1729

Figure 2. Gate-dependent spectral properties of NV centres.

Figure 2

(a) Spectra of the H-terminated area of a 10 keV implantation in a region with high implantation density (black: UG=+0.5 V, red: UG=−0.5 V). ZPL, zero-phonon-line. (b–d) Difference of the spectra at UG=+0.5 V and UG=−0.5 V ((b) at ∼1013 cm−2, (c) at ∼1012 cm−2 and (d) at ∼1011 cm−2). The dashed line indicates zero level. (e) Difference spectrum of a single NV centre (implantation density ∼1011 cm−2) when switching from UG=+0.4 V to UG=−0.4 V. The dashed line indicates zero level.