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. Author manuscript; available in PMC: 2012 Apr 4.
Published in final edited form as: J Appl Phys. 2006 Nov 15;100(10):104322–104330. doi: 10.1063/1.2363900

FIG. 12.

FIG. 12

(Color online) Normalized ion-implantation-induced stress vs ion dose. The solid symbols represent the data for the low-stress nitride, whereas the open symbols represent the data for the high-stress nitride. The squares represent the results obtained from rectangular implanted areas, whereas the circles represent the results from circular areas.