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. Author manuscript; available in PMC: 2012 Apr 4.
Published in final edited form as: J Appl Phys. 2006 Nov 15;100(10):104322–104330. doi: 10.1063/1.2363900

FIG. 4.

FIG. 4

(Color online) AFM image showing the depression induced in a freestanding low-stress silicon nitride membrane by ion beam irradiation (625×1015 ions/cm2) over a circular region. The AFM scan was made on the back side of the membrane. The AFM sectional profile, shown below the AFM image, reveals the gradual deflection of the membrane.