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. 2011 Aug 16;5(3):036501–036501-7. doi: 10.1063/1.3625605

TABLE II.

Several different protocol parameters for vapor phase organosilane deposition.

Organosilane Substrate Surface preparation Temperature Pressure Time Notes Reference
APTMS Glass Piranha Unspecified 670 Pa 16 h   11
MPTS SiO2 Sulphuric acid/sodium peroxydisulphate 100 °C Unspecified Unspecified Also pumped (pressure unspecified) 63
  Si Piranha, oxygen Plasma Unspecified 1 mTorr 4 h   64
  Silica Piranha, UV ozone Unspecified 200 mBar 0-120 h   39
OTMS SiO2 UV irradiation 100/150 °C Unspecified 1-16 h Patterned with AFM 27
OTS Si UV irradiation 150 °C Unspecified 0.5-8 h   26
PFS Si UV irradiation 150 °C Unspecified 0.5-8 h   26
  Si NH4O4/H2O2/H2O (1:1:4) 45 °C Unspecified 3 h In N2 atmosphere 5
  SiOx Plasma Unspecified 1 Torr 1 h   48
  SU8 Unspecified (after patterning) Unspecified 0.5 bar Unspecified   46

APTMS—(3-Aminopropyl)trimethoxysilane, MPTS—(3-mercaptopropyl)trimethoxysilane, OTS—octadecyltrichlorosilane, OTMS—octadecyltrimethylsilane, PFS—polytetrafluoroethylene based organosilanes.