Table 2.

Simulation results: Examination of bootstrap standard errors (t=2, n=200)

	Setting	C%	log ϕ 1(t)	BIAS	ASE	ESD	CP
	I	23%	0.283	0.017	0.331	0.317	0.96
		40%		0.022	0.344	0.337	0.96
log ϕ̂1(t)	II	13%	0.778	0.004	0.309	0.320	0.94
		33%		0.022	0.323	0.332	0.95
	III	28%	0.778	0.017	0.321	0.326	0.95
		46%		0.024	0.347	0.356	0.95
	Setting	C%	log RR1(t)	BIAS	ASE	ESD	CP
	I	23%	0.238	0.015	0.283	0.270	0.96
		40%		0.019	0.293	0.286	0.96
$\text{log }{\widehat{\mathit{\text{RR}}}}_1(t)$	II	13%	0.619	0.007	0.255	0.264	0.94
		33%		0.021	0.267	0.274	0.95
	III	28%	0.619	0.017	0.265	0.269	0.96
		46%		0.024	0.288	0.297	0.95
	Setting	C%	Δ1(t)	BIAS	ASE	ESD	CP
	I	23%	−0.036	−0.002	0.087	0.087	0.95
		40%		−0.004	0.089	0.090	0.94
Δ̂1(t)	II	13%	−0.196	0.005	0.095	0.100	0.93
		33%		−0.002	0.096	0.099	0.93
	III	28%	−0.196	−0.002	0.096	0.099	0.94
		46%		−0.001	0.099	0.102	0.94

Setting I: η₁ = 0, η₂ = 0.2, η₃ = 0.5, θ = 1

Setting II: η₁ = 0.5, η₂ = 0.2, η₃ = 0.5, θ = 1

Setting III: η₁ = 0.5, η₂ = 0.2, η₃ = 0.5, θ = 0.25