Skip to main content
. 2012 Jun 15;2:461. doi: 10.1038/srep00461

Figure 3. Direct to indirect bandgap conversion.

Figure 3

(a) Mechanism of bandgap conversion in response to compressive strain is due to lowering of C2 sub band. Electronic structure of (b) unstrained and (c) −5% strained 3.1 nm [110] SiNW. The indirect conduction band minimum of strained case (c) is lower than the direct conduction band minimum by ΔΩ = 80 meV. This quantity determines the order of phonon mediated process for light emission.