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. 2012 Jun 28;2:477. doi: 10.1038/srep00477

Figure 1. (a) Schematic band diagram for InAs QD inserting in a symmetric and an asymmetric InGaAs QW pairs; (b) Room temperature PL spectra of different 1.55 µm InAs QD structures under identical excitation power of 120 mw.

Figure 1

Inset: a comparison of room temperature PL characteristics between a 1.3 µm QD sample and a 1.55 µm QD sample.