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. 2012 May 27;38(3):465–496. doi: 10.1007/s10867-012-9267-7

Table 7.

List of parameters used for post-synaptic potential generation

Symbol Description Value Reference
Rm Actual resistance of the spine-head 0.79 × 105 MΩ Calculated using (19)
Inline graphic Post-synaptic resting membrane potential −70 mV
τpost Post-synaptic membrane time constant 50 ms [29]
gAMPA AMPAR conductance 0.35 nS [31]
VAMPA AMPAR reversal potential 0 mV [31]
αAMPA AMPAR forward rate constant 1.1 μM s − 1 [31]
βAMPA AMPAR backward rate constant 190 s − 1 [31]