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. Author manuscript; available in PMC: 2013 May 1.
Published in final edited form as: Sens Actuators A Phys. 2012 May 1;178:193–201. doi: 10.1016/j.sna.2012.02.029

Figure 7.

Figure 7

(a) Angular displacement with 10 Vpp driving voltage for two devices with identical structure (1600 × 840 μm mirror with 500 μm long cantilever, 0.64 μm PZT) other than the thickness of silicon nitride stress balance layer. The increased silicon nitride thickness reduced the native tilt from >45° to 22°.