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. Author manuscript; available in PMC: 2013 Jul 11.
Published in final edited form as: Nanotechnology. 2012 Jun 18;23(27):275502. doi: 10.1088/0957-4484/23/27/275502

Figure 2.

Figure 2

Figure 2

Characterization of the device (a) Representative I–V data after FIB scratching of metal line shows linear ohmic behavior. (b) A sudden drop in current confirms the complete breaking of metal line due to electromigration and results in nanogap break-junctions. (c) SEM micrograph showing a clean break between nanoelectrodes. Inset shows magnified view of a break-junction with a gap smaller than 30 nm. (d) Comparison of I–V data for a representative break-junction before and after the electromigration.