Fig. 5.
Room-temperature dc and rf characteristics of the self-aligned peeled graphene transistor with transferred gate stacks. (A) The transfer characteristics and corresponding transconductance at a dc bias voltage of 1 V for the 67-nm channel-length self-aligned peeled graphene device. (B) Small-signal current gain |h21| versus frequency for the 67-nm peeled graphene device under two different dc bias voltages. The cutoff frequency is 427 GHz for 1.1-V bias (solid block) and 169 GHz for 0.4-V bias (open block). (Inset) Extraction of fT by Gummel’s method.