Figure 6.

Top: reconstruction error (difference between reconstructed and injection position) for a simulated flat-field illumination of the 20 and 25 µm pitches for an ENC of 340 e⁻. The smaller pitch shows a smaller reconstruction error. Bottom: reconstruction error distributions for the 20 µm-pitch strip for injection positions 0 µm (centred on the left strip) and 8 µm (close to the strip border) shown for an ENC of 340 e⁻. The differences between the two distributions are due to little charge sharing at injection point 0 µm. Gaussian fits give a reconstruction error σ_x of 1.38 ± 0.04 µm at the strip centre and 0.40 ± 0.03 µm close to the strip boundary.