Table 4.

Model equations for noise estimation

Region	Model Equations	Description of Variables
Si-NW	Low-frequency voltage noise $\delta V_{1/f}=\sqrt{{\int }_{f_1}^{f_2}{S}_{V_{FB}}df}=\sqrt{\frac{q^2{k}_B{TN}_t\lambda }{{\mathit{WLC}}_{\mathit{eff}}^2}ln\frac{f_2}{f_1}}$ where $S_{V_{FB}}=\frac{q^2{k}_B{TN}_t\lambda }{\mathit{fWL}{C}_{\mathit{eff}}^2}$ (Acceptor like interface traps (Dit) are assumed at Si/Gate oxide interface. For SiO2/HfO2 gate oxide stack, a fixed interface charge is assumed.)	W = 0.1 μm, L = 20 μm f1 = 1Hz, f2 = 1kHz (f1, f2: low and high cutoff frequency) α = 1.5×105 V s/C (Coulomb scattering coefficient) λ = 0.5 Å (tunneling parameter) Nt = 3×1016eV−1 cm−3, (trap density) Ceff = (1/CSiO2+1/CHfO2)−1 = 8.17×10−7 F/cm2 T=300K
Electrolyte	Electrolyte bulk resistance $\delta V_e=\sqrt{{\int }_{f_1}^{f_2}{S}_{V_e}df}=\sqrt{4k_B{TR}_b(f_2-f_1)}$ where SVe=4kBTRbs and $R_b\sqrt{\pi /WL}/\kappa$	κ = 0.124×10−3 S/cm (electrolyte conductivity), kB: Boltzmann constant, T-Temperature