Figure 5. Distributed Memory Storage from Network-scale Switching.

(a) The device operates as a 2-bit non-volatile memory device. The resistance states across two channels (i–iii and ii–iv) are monitored. ON/OFF switching of each channel is induced using super-threshold pulses (3 V, 1 s in duration); the threshold voltages for each channel are ∼1.5 V. The resistances are measured every 5 s with a sub-threshold 200 mV, 100 ms pulses. (b) Although the device operates with a four state output (both channels ON, 1 ON/1 OFF, etc), the network's internal configurations show diverse correlated patterns, from no correlation (blue) to total correlation (yellow). The figure shows correlation coefficients of channel resistances for all 6 pairwise electrode combinations. The correlation coefficients are calculated during each of the 4 network switching configurations; the black and red bars (insets) show the channels that are ON in the switching state.