Skip to main content
. 2012 Aug 1;101(5):053113. doi: 10.1063/1.4739947

Figure 2.

Figure 2

(a) The STM topographic image (+1.2 V, 20 pA, 15 × 10 nm2) of a Gd-doped SiNW. (b) A set of five dI/dV curves acquired at different positions (A-E) along a Gd-doped SiNW, as indicated in (a). (c) A set of five dI/dV curves acquired at different positions (F-J) within the adjacent substrate. All dI/dV curves in (b) and (c) were acquired at Vb = 1.5 V, It = 20 pA. (d) Six dI/dV curves on the site K taken at different tip-sample distances set by It = 50–100 pA at Vb = 1.0 V.