Figure 3.
STM topographic images (−1.0 V, 10 pA, 33 × 20 nm2) and of two different parallel Gd-doped SiNW arrays obtained by depositing Gd of 0.1 ML (a) and 0.01 ML (c), respectively. [(b), (d)] Different dI/dV curves of the individual Gd-doped SiNWs in (a) and (c), taken at various tip–sample distances set by various It of 50–100 pA at Vb = 1.0 V.
