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. 2012 Aug 1;101(5):053113. doi: 10.1063/1.4739947

Figure 4.

Figure 4

(a) The dI/dV map (250 × 50 pixel2) taken at Vb = −1.380 V and (b) the corresponding topographic STM image (21 × 4 nm2) of the parallel Gd-doped SiNW array shown in Fig. 1d. (c) Intensity profiles of the dI/dV map along the dashed line in (a). (d) Cross-sectional profiles across the parallel Gd-doped SiNWs along the dashed line in (b).