Figure 4.
Diffuse-reflectance UV–vis spectroscopy. The T-NT on Si after anodization at 10 to 60 V and annealing in air at 350 °C. The anodization time was 1 h. The band gap was about 3.4 to 3.25 eV.
Official websites use .gov
A
.gov website belongs to an official
government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you've safely
connected to the .gov website. Share sensitive
information only on official, secure websites.