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. 2012 May 30;12(6):7337–7349. doi: 10.3390/s120607337

Table 3.

Design parameters of the fabricated devices.

Device # SiO2 Thickness (μm) SU-8 Thickness (μm)/(h/λ)
1 0.21 0.9/0.032
2 0.21 0.1/0.0035
3 0.21 0.8/0.028