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. 2012 Jul 2;287(36):30719–30728. doi: 10.1074/jbc.M112.370742

TABLE 3.

IVST and EC50 of WT and mutant channels in the presence of CssIVE15A

IVST is the normalized voltage-sensor trapping current observed at a test pulse to −60 mV following a prepulse (see text). For channels in which saturating effects of CssIVE15A could be recorded, KD values were calculated from fitting the data to the voltage-sensor trapping model. IVST data are presented as mean ± S.E.

Channel Concentration IVST (+Pre) n EC50
nm nm
WT 50 3.2 ± 1.7% 3 1100
100 5.0 ± 0.9% 8
200 7.9 ± 1.0% 6
500 16.2 ± 2.6% 5
1,000 28.0 ± 4.3% 4
2,000 44.8 ± 1.0% 5
5,000 48.9 ± 3.9% 10
10,000 54.2 ± 5.5% 3
N1436G 20 9.24 ± 1.0% 6 274.2
50 11.5 ± 2.5% 4
100 17.5 ± 2.9% 9
200 28.5 ± 2.8% 12
500 38.2 ± 3.8% 7
E1438A 500 3.7 ± 0.54% 7 NAa
L1439A 100 6.6 ± 1.8% 7 1071.5
200 17.4 ± 2.1% 5
500 31.3 ± 6.6% 5
1,000 38.0 ± 4.6% 8
2,000 59.7 ± 3.9% 4
5,000 71.6 ± 6.7% 4
D1445A 500 4.8 ± 0.7% 4 NA
D1445Y 500 0.4 ± 0.3% 5 NA

a NA, not applicable.