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. 2012 Jun 26;7(1):344. doi: 10.1186/1556-276X-7-344

Figure 3.

Figure 3

Under-mask etching as a function of the PoSi region thickness. The anodizations were performed at 28 mA cm−2 in a HF (30 wt.%)-acetic acid (25 wt.%) electrolyte in p-type 20-mΩ cm silicon.