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. 2012 Oct 11;2:726. doi: 10.1038/srep00726

Figure 3. Electrical transport of Bi2Se2Te (BST) crystal under zero magnetic field.

Figure 3

(a) Temperature-dependence of longitudinal resistance Rxx. Lower inset shows the Arrhenius plot of RxxInline graphic, which yields an activation energy of 100 meV in the temperature range of 120-300 K. Upper inset plots the Rxx at temperature lower than 20 K and no apparent saturation was observed. (b) A plot of longitudinal conductance Gxx vs T−1/4. Solid line (red) is the data fit to the 3D variable range hopping (VRH): GxxInline graphic; deviation from the fit at low temperature signifies the parallel metallic conduction. (c) Temperature-dependence of the low-field RH. Inset shows the Rxy curve at 1.9 K. The dominant charge carriers are electrons.