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. 2012 Oct 18;2:754. doi: 10.1038/srep00754

Figure 3. FET performance characteristics of different-dimension OTFT devices with channel semiconductor 1.

Figure 3

(a) Transfer characteristics of devices with different channel lengths at source/drain voltage (VDS) of −80 V showing dependence of (IDS)1/2VG plot on channel length. (b) Transfer characteristics of a 10-μm device (W = 1400 μm) under different VDS showing dependence of (IDS)1/2VG plot on source/drain field.