Figure 4. Temperature effects on FET characteristics.

(a) Plot of source-drain current (I_DS) as a function of gate voltage (V_G) at various temperatures (77 K to 373 K) with source-drain voltage V_DS = −40 V (inset is plot of square root of I_DS as a function of V_G at different temperatures and V_DS = −40 V). (b) Temperature dependence of electron and hole mobilities in vacuum (inset is the temperature dependence of threshold voltage, V_T). The lowest electron and hole mobilities at 77 K are respectively 0.011 cm² V⁻¹ s⁻¹ and 0.096 cm² V⁻¹ s⁻¹ while the highest electron and hole mobility at 373 K are respectively 1.58 cm² V⁻¹ s⁻¹ and 13.41 cm² V⁻¹ s⁻¹ (W/L = 1400 μm/50 μm).