Table 2. Field-effect performance characteristics of OTFTs of different device configurations and dimensions with channel semiconductor 1 as measured under ambient conditions.
| OTFT Configuration† | Substrate | Deposition Process | Dielectric (nm)/SiO2-modifying agent‡ | W/L (μm/μm) | μ (cm2V−1s−1) | Ion/Ioff (log10) | VT (V) | S (Vdec−1) |
|---|---|---|---|---|---|---|---|---|
| BGTC | Silicon | Spin coating | SiO2 (200)/OTS-8 | 4000/100 | 5.5–8.2 | 7.0–8.0 | 0–4 | 0.8–1.0 |
| BGTC | Silicon | Spin coating | SiO2 (200)/OTS-8 | 4000/125 | 5.5–9.0 | 7.0–8.0 | 0–4 | 0.8–1.0 |
| BGBC | Silicon | Spin coating | SiO2 (300)/OTS-18 | 1400/30 | 3.5–8.0 | 6.0–8.0 | –5–3 | 0.8–1.6 |
| BGBC | Silicon | Spin coating | SiO2 (300)/OTS18 | 1400/40 | 5.4–10.5 | 6.0–8.5 | –6–4 | 0.7–1.4 |
| BGBC | Silicon | Spin coating | SiO2 (300)/OTS-18 | 1400/50 | 5.2–10.5 | 6.0–8.5 | –6–3 | 0.7–1.4 |
| BGTC | Silicon | Blade coating | SiO2 (200)/OTS-8 | 4000/125 | 3.5–5.3 | 6.0–7.0 | –1–1 | 1.0–1.2 |
| BGTC | Silicon | Inkjet printing | SiO2 (200)/OTS-8 | 1400/125 | 1.5–3.5 | 5.5–6.0 | –1–1 | 1.0–1.2 |
| BGBC | PET | Spin coating | PAN/PMSQ (800/50)/OTS-18 | 7000/70 | 1.7–5.3 | 5.0–7.5 | –6–2 | 1.3–2.0 |
†BGTC: bottom-gate, top-contact; BGBC: bottom-gate, bottom-contact.
‡OTS-8: surface modification with octytrichlorosilane and OTS-18: surface modification with octadecyltrichlorosilane.