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. 2011 Nov 1;19(23):23327–23340. doi: 10.1364/OE.19.023327

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©2011 Optical Society of America

This is an open-access article distributed under the terms of the Creative Commons Attribution-Noncommercial-No Derivative Works 3.0 Unported License, which permits download and redistribution, provided that the original work is properly cited. This license restricts the article from being modified or used commercially.

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Fig. 4 — (a) Label-free image of the PC with a pattern of deposited 10 nm SiO₂ film. The image clearly highlights the variation in resonance angle in the transparent and opaque areas of the pattern Our selection of a negative control region is highlighted with a white dashed box. (b) Transmission spectrum of the pattern showing the difference in angle of resonance (minima in transmission) for the areas with and without additional SiO₂. More SiO₂ gives a larger resonance angle. (c) Histogram showing the distribution of resonance angle versus the number of pixels used to make our selection of the threshold angle. The inset image shows the mask generated by using the threshold set by θ_TA = 1.28 °. The green region has a resonance angle above the threshold angle and the yellow region has a resonance angle below the threshold angle.