Table 1.
Modifications | Improvement in Sensitivity |
---|---|
(1) Narrower sensing beams with thinner geometry | ∼40% |
(2) Thinner passivation layers on piezoresistors | ∼40% |
(3) Shallower piezoresistors with lower doping level | ∼10% |
(4) Elimination of negative regions in piezoresistors | ∼30% |
Total | ∼280% |