Fig. 7.

Effect of heat stress on seed production and silique length in control (WT), apx1, apx2, and apx1/apx2 plants. (A) Photographs of representative cleared siliques from WT, apx1, apx2, and apx1/apx2 plants grown under controlled growth conditions (control), or subjected to periodic heat stress at 42 or 45 °C. Bar=5mm (B and C) Graphs showing silique length (B), and number of seeds per silique (C), from WT, apx1, apx2, and apx1/apx2 plants grown under controlled growth conditions (control), or subjected to periodic heat stress at 42 or 45 °C. Siliques were obtained from plants subjected to different temperatures of heat stress (42 and 45 °C) and treated with 80% ethanol to remove chlorophyll as described in Materials and methods. **, Student’s t-test significant at P < 0.01.