Figure 3. Electrical characters of LCOMs.

(a) The transfer curve evolution after storage for 20000 s as the gate voltage was kept at 0 V. As calculated, 92% of the charges in the memory layer retained after storage for 20000 s. The trapped charges escaped at an average rate of 9.3×10⁻¹³ A cm⁻². (b) The transfer curve evolution after a 0.5 s erasing voltage (V_E) pulse of −100 V. (c) Plot of average hole injection current (the number equals to the rate of electrons flowing out but opposite in direction) versus erasing voltage (V_E) for devices saturated by different writing voltage (V_W). (d) The calculated maximum electron density under different writing voltage (V_W) and the measured results. Inset: voltage distribution across the device as the gate voltage was positively biased (V_W).