Figure 2. Batch-fabricated micro GHEs and their room temperature characteristics.

(a) Optical image showing GHEs arrays on a Si/SiO₂ chip. (b) SEM image showing one of the GHEs of (a) and related Hall testing circuitry. (c) Hall voltage versus magnetic field measured in current mode. Inset: current-related sensitivity. (d) Linearity error of the GHE working in current mode and in a magnetic field ranging from 0 to 2 T. Inset: a typical linear fitting of the Hall voltage versus magnetic field. (e) Hall voltage versus magnetic field in voltage mode. Inset: voltage-related sensitivity. (f) Linearity error of the GHE working in voltage mode and in a magnetic field ranging from 0 to 1 T. Inset: a typical linear fitting of the Hall voltage versus magnetic field.