Skip to main content
. 2013 Feb 7;3:1238. doi: 10.1038/srep01238

Figure 5. Electrical measurement of GNM-based transistor.

Figure 5

(a) Schematic illustration of GMN transistor structure with channel length of 2 μm and width of 1 μm. (b) Typical transfer characteristics for transistor devices based on as-grown and post-growth etched GNM at source-drain voltage Vd = 10 mV. (c) Statistics of the hole mobility of as-grown and post-growth etched GNM transistor devices.