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Process parameters for ZnO film deposited by AD method.
| Item | Data |
|---|---|
| Starting powder | ZnO |
| Substrate | Silicon |
| Pressure difference between deposition and aerosol chambers | 140 (Torr) |
| Carrier gas | Nitrogen |
| Consumption of carrier gas | 3 (L/min) |
| Orifice size of nozzle | 0.4 × 10 (mm × mm) |
| Substrate temperature | 25 (°C) |
| Deposition area | 70 × 70 (mm × mm) |
| Distance between nozzle and substrate | 5 (mm) |
| Scanning rate | 10 (mm/s) |
| Deposition rate | 8.2 (nm/s) |
