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. 2013 Jan 15;13(1):966–974. doi: 10.3390/s130100966

Figure 3.

Figure 3.

(a) IDS-VG curve measured with VDS = 1 V for a pristine SWNT-FET device. (b) IDS-VG curve measured with VDS = 1 V for a C59N@SWNT-FET device.