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. 2013 Jan 15;13(1):966–974. doi: 10.3390/s130100966

Figure 4.

Figure 4.

(a) IDS-VG characteristics (VDS = 1 V) of a C59N@SWNT-FET device measured without and with light (400 nm) illumination at room temperature 300 K. (b) IDS-VG characteristics (VDS = 0.5 V) of a C59N@SWNT-FET device measured without and with light (400 nm) illumination at low temperature of 10 K.