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. Author manuscript; available in PMC: 2013 Mar 6.
Published in final edited form as: IEEE Trans Ultrason Ferroelectr Freq Control. 2011 Dec;58(12):2646–2658. doi: 10.1109/TUFFC.2011.2127

Fig. 10.

Fig. 10

Measured performances of an integrated preamplifier and its front-end circuits. (a) Lowest input reflection coefficient: −17.42 dB at 103 M Hz for BiCMOS preamplifier and −27.63 dB at 93 M Hz for CMOS preamplifier. (b) Lowest output reflection coefficient: −21.94 dB at 95 M Hz for BiCMOS preamplifier and −22.18 dB at 102 M Hz for CMOS preamplifier. (c) Reverse voltage gain: −50.67 dB at 80 M Hz for BiCMOS preamplifier and −51.97 dB at 80 M Hz for CMOS preamplifier. (d) Lowest noise figure: 2.9 dB at 100 M Hz for BiCMOS preamplifier and 3.51 dB at 70 M Hz for CMOS preamplifier. (e) Voltage gain of integrated preamplifier: for BiCMOS preamplifier, peak voltage gain is 25.8 dB at 100 M Hz, −3-dB bandwidth is 82%, and −6-dB bandwidth is 130%. For CMOS preamplifier, peak voltage gain is 24.08 dB at 93 M Hz, −3-dB bandwidth is 79%, and −6-dB bandwidth is 183%. (f) Voltage gain of front-end circuits: for BiCMOS preamplifier and filter, voltage gain is 41.28 dB at 100 M Hz, −3-dB bandwidth is 33%, and −6-dB bandwidth is 91%. For CMOS preamplifier and filter, voltage gain is 39.52 dB at 99 M Hz, −3-dB bandwidth is 58%, and −6-dB bandwidth is 108%. (g) Voltage gain graph of Sallen-Key active Butterworth filter: 16.35 dB at 80 M Hz. (h) IIP3 of an integrated preamplifier: IIP3 of BiCMOS preamplifier is −12 dBm and IIP3 of CMOS preamplifier is −3.5 dBm. (i) Output power at 1 dB compression point (OP1dB) versus frequency. (j) Output third-order intercept point (OIP3) versus frequency.