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. 2013 Mar 12;3:1426. doi: 10.1038/srep01426

Figure 1. Sample structure and properties.

Figure 1

(a) Schematic of the sample layer structure consisting of an in-plane magnetized fixed (polarizer) layer and an out-of-plane magnetized free layer. (b) Resistance as a function of in-plane magnetic field (H∥) and perpendicular magnetic field (H⊥) for sample 1 (t = 1.60 nm), inset in (b) is the resistance as a function of H⊥, the black (red) arrow denotes the magnetization direction of the reference (free) layer. (c) Resistance-Current curve at zero applied magnetic field, AP (P) denotes the antiparallel (parallel) configurations between the free and fixed layers. (d) Microwave spectra as a function of d.c. current bias I at zero applied magnetic field, the curves are offset by approximately 20 nW GHz−1 along the vertical axis for clarity. Inset: full width at half maximum (FWHM, or linewidth) (triangles) and f0 (circles) of the STNO sample 1 as a function of I.