Figure 32.
Slit-well motifs for exploiting (a) the entropic trapping regime using long DNA and (b) the Ogston sieving regime using short DNA. (c) The devices are patterned by two etching steps. As we see from the side view of the device (90° rotation of the other schematics), the optical lithography patterning of the devices leads to similar periodicities and channel sizes in both types of devices. The direction of the DNA motion is the same in panels (a) and (b).