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. Author manuscript; available in PMC: 2014 Apr 10.
Published in final edited form as: Chem Rev. 2012 Nov 12;113(4):2584–2667. doi: 10.1021/cr3002142

Figure 32.

Figure 32

Slit-well motifs for exploiting (a) the entropic trapping regime using long DNA and (b) the Ogston sieving regime using short DNA. (c) The devices are patterned by two etching steps. As we see from the side view of the device (90° rotation of the other schematics), the optical lithography patterning of the devices leads to similar periodicities and channel sizes in both types of devices. The direction of the DNA motion is the same in panels (a) and (b).