Figure 4. Comparative analysis between silicon substrates with similar topographical features.

The silicon substrates B₁, C₁ and C₂ present similar D_f ( = 2.26 ± 0.02) and a different R_a ( = 34.10, 36.98 and 50.22 nm). For these substrates, the variation in topographical features is shown in the inset (A), the variation in adhesion behavior is shown in the inset (C), and the variation in proliferation rates is shown in the inset (E). The silicon substrates A₂, B₂ and C₂ present similar R_a ( = 48.94 ± 3.96 nm) and a different D_f ( = 2.56, 2.37 and 2.27). For these substrates, the variation in topographical features is shown in the inset (B), the variation in adhesion behavior is shown in the inset (D), and the variation in proliferation rates is shown in the inset (F).