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. 2013 Mar 26;3:1546. doi: 10.1038/srep01546

Figure 1. Core-shell Si nanowire device architecture.

Figure 1

(a) 3D cross-section illustration of the core-shell Si nanowire (NW) device structure. The active device region is the radial n-i-p thin film Si shell surrounding the nanowire. Light is incident through the aluminum doped ZnO (ZnO∶Al) transparent conductive oxide top contact. The intrinsic (i) region is amorphous Si (a-Si) or nanocrystalline Si (nc-Si). (b) 3D cross-section illustration of a planar control cell.