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. 2013 Mar 28;3:1568. doi: 10.1038/srep01568

Figure 3.

Figure 3

(a) Cyclic voltammetry of hollow porous SiO2 nanocubes between 3 and 0 V at a scan rate of 0.1 mVs−1, (b) Galvanostatic discharge/charge voltage profiles of hollow porous SiO2 nanocubes at a rate of 100 mAg−1, (c) Discharge capacities versus cycle number of hollow porous SiO2 nanocubes at the current density of 100 mAg−1 between 3 and 0 V.