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. 2013 Apr 10;3:1637. doi: 10.1038/srep01637

Figure 1. SiC LED with intrinsic defects.

Figure 1

(a) A scheme of the SiC LED. (b) Electron-hole recombination through the D1 and VSi defects results in the 550 nm and 950 nm emission bands, respectively. The radiative band-to-band recombination (BB) at 400 nm is inefficient because SiC is an indirect bandgap semiconductor.