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. 2013 Apr 10;3:1637. doi: 10.1038/srep01637

Figure 2. Room-temperature electroluminescence of intrinsic defects in SiC.

Figure 2

(a) An image of the luminous LED around an Al contact. (b) Electroluminescence (EL) spectrum of the SiC LED and photoluminescence (PL) spectrum of the reference SiC sample recorded at room temperature. The PL spectrum is excited by a He-Ne laser with Eexc = 1.96 eV (633 nm). The bandgap of 6H-SiC is Eg(SiC) = 3.05 eV.